Semiconductor Nanomaterials and their Based Study of Physical Properties of Functional Composites
DOI:
https://doi.org/10.69760/portuni.010308Keywords:
nanocrystal, composite material, exciton, light-emitting diode, electric fieldAbstract
The article studies the optical properties of two-dimensional nanocrystals of semiconducting potassium selenium (GaSe) in the structure of the composite active layer of a device analogous to an organic-inorganic light-emitting diode under the influence of an external electric field. The prepared device is a thin dielectric composite with two-dimensional GaSe nanocrystals, enclosed between indium tin oxide (capacitor-type device) and glass plates. It was experimentally shown that when an external electric field is applied to two-dimensional GaSe nanocrystals placed inside a dielectric composite, the integral intensity of their photoluminescence decreases by 15% (0–90 kV/cm), then the intensity is restored when the field is reduced to 0 kV/cm. After the external effect is removed, an increase in the intensity by 5% compared to the initial state was observed. The obtained experimental results and modeling based on them allowed us to put forward a hypothesis that the external electric field prevents the long-term (on the order of several microseconds) trapping of one of the excited charge carriers, and as a result, the recombination of excitons occurs on the nanosecond time scale. The potential of the new scientific method for determining the elemental and structural composition of composites is confirmed by the qualitative results of microspectral analysis of functional composite layers of the dye.
References
Chen Z., Nadal B., Mahler B., Aubin H., Dubertret B. Quasi–2D Colloidal Semiconductor Nanoplatelets for Narrow Electroluminescence //AdvancedFunctionalMatials.2014.Vol.24P. 295–302.
Gan X., Shiue R.J., Gao Y., Meric I., Heinz T.F., Shepard K.L., Hone J., Assefa S., Englund D. Chip – integrated ultrafast graphene photodetector with high sensitivity//NaturePhotonics.2013. Vol. 7. P. 883–887.
Gorkina A.L., Tsapenko A.P., Gilshteyn E.P., Koltsova T.S., Larionova T.V., Talyzin A., Anisimov A.S., Anoshkin I.V., Kauppinen E.I., Tolochko O.V., Nasibulin A.G. Transparent and conductive graphene films // Carbon. 2016. Vol. 100. – P. 501–507.
Grim J.Q., Christodoulou S., Di Stasio F., Krahne R., Cingolani R., L. Manna, Moreels I., Continuous-wave biexcitonlasing using room temperature solution-processed quantum wells // Nature Nanotechnology. 2014. Vol. 9. P. 891–895.
Guzeltürk B., Kelestemur Y., Olutas M., Delikanli S., Demir H. V. Amplified Spontaneous Emission and Lasing in Colloid Nanoplatelets // ACS Nano. – 2014. – Vol. 8. – P. 6599–6605.
Ithurria S., Dubertret B. Quasi-2D colloidal CdSe platelets with atomically controlled thickness // Journal of the American Chemical Society. 2008. Vol. 130, pp. 16504–16505.
Ithurria S., Dubertret B., Am J. //Reviews of the Chemical Society. 2008. Vol. 130. P. 16504–16505.
Lhuillier E., Dayen J.F., D.O. Thomas, A. Robin, Doudin B., Dubertret B. // Nano Letters. 2015. Vol. 15. P. 1736–1742.
Liu, E., Fu, Y., Wang, Y., Feng, Y., Liu, H., Wan, X., Zhou, W., Wang, B., Shao, L., Ho, C., Huang,Y., Cao, Z., Wang, L., Li, A., Zeng, J., Song, F., Wang, X., Shi, Y., Yuan, H., Hwang, H. Y., Cui, Y., Miao, F., Xing, D. Y. Integrated digital converters based on two-dimensional communicative anisotropic field transistor //Anisotropic Transistors. 2015. Vol. 6. pp. 6991–6991.
Miller, D. A. B., Chemla D. S., Damen T. C., Gossard A. C., Wiegmann W., Wood, T. H. and Burrus C. A. Band-edge electroabsorption-quantum well structures: quantum-confined Stark effect//Physical Review Letters. 1984. Vol. 53, No. 22. P. 2173.
Ottaviano L. et al., Mechanical Etching and Layer Number Identification of MoS2 revisited//2D Materials. 2017. Vol. 4. P. 045013.
RenQ.,FengZ.,MoS.,HuangC.,LiS.,ZhangW.,ChenL.,FuM.,WuJ.,YeD.1DCo3O4,2D–Co3O4,3D–Co3O4 for the catalytic oxidation of toluene//CatalysisToday. 2019. P. 160–167.
S.A.Jafarov..K.Kalantar MAGNETIC POLYMER NANOCOMPOSITE MATERIALS SYNTHESIS AND CONSTRUCTION 3rd International Silk Road Conference. UzbekistanSamarkand 2024
Shklovskii B., Efros A. Electronic properties of doped semiconductors // Springer series in Solid State Science. – 1984. Vol. 45. – P. 388.
Vitukhnovski A.G., Lebedev V.S., Selyukov A.S., Vashchenko A.A., Vasiliev R.B., SokolikovaM.S.//Chemical Physics Letters. 2015. Vol. 619.P.185–188.
Wu L., Chu H. S., Koh W. S., Li E. P. Highly sensitive graphene biosensors based on surface plasmon resonance, // Optics Express. 2010. Vol. 18. P. 14395–14400.
Yamashita Sh. atall.//ATTutorial on Nonlinear Photonic Applications of Carbon Nanotubes and Graphene//Journal of Lightwave Technology. 2011. Vol. 30 (3). P. 427–447.
Downloads
Published
Issue
Section
License
Copyright (c) 2025 Porta Universorum

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
License Terms
All articles published in Porta Universorum are licensed under the Creative Commons Attribution–NonCommercial 4.0 International License (CC BY-NC 4.0). This license permits:
-
Sharing (copying and redistributing the material in any medium or format),
-
Adapting (remixing, transforming, and building upon the material),
-
for non-commercial purposes only,
-
with proper attribution to the original author(s) and source.
Commercial use of the material is not permitted without prior written permission from the publisher.